AON7460 300v,4a n-channel mosfet general description product summary 350v@150 i d (at v gs =10v) 4a r ds(on) (at v gs =10v) < 0.83 w 100% uis tested! 100% r g tested! the AON7460 is fabricated using an advanced high vo ltage mosfet process that is designed to deliver high lev els of performance and robustness in popular ac-dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.this device is ideal for boost converters a nd synchronous rectifiers for consumer, telecom, indus trial power supplies and led backlighting. v ds absolute maximum ratings t a =25c unless otherwise noted g ds dfn 3x3a_ep top view bottom view pin 1 top view g s s s d d d d symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg symbol t 10s steady-state steady-state r q jc c/w c/w 3.1 75 3.7 t c =100c 33 t a =25c p dsm a 13 v/ns 5 p d t a =70c 1.0 300 pulsed drain current c continuous drain current b a mj mj continuous drain current t a =25c i dsm 1.2 13 v units parameter a maximum drain-source voltage power dissipation b v 30 gate-source voltage t c =100c a i d t c =25c 4 2.5 c/w 30 parameter power dissipation a typ ww junction and storage temperature range -50 to 150 c maximum junction-to-case avalanche current c 2.1 repetitive avalanche energy c 66 single pulsed avalanche energy g 132 t c =25c 60 40 3.1 w t a =70c 2 maximum junction-to-ambient a r q ja maximum junction-to-ambient a d max thermal characteristics units g ds dfn 3x3a_ep top view bottom view pin 1 top view g s s s d d d d rev 0: mar 2011 www.aosmd.com page 1 of 6
AON7460 symbol min typ max units 300 350 bv dss / ? tj 0.3 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.67 0.83 w g fs 2 s v sd 0.76 1 v i s maximum body-diode continuous current 4 a i sm 13 a c iss 240 310 380 pf c oss 30 45 60 pf c rss 3.0 pf r g 1.4 2.9 4.5 w q g 5.4 6.8 8.2 nc q gs 1.9 nc q gd 2.0 nc t d(on) 17 ns t r 8 ns t d(off) 29 ns static drain-source on-resistance v gs =10v, i d =1.2a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters forward transconductance i s =1a,v gs =0v v ds =40v, i d =1.2a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions zero gate voltage drain current id=250 a, vgs=0v bv dss m a v v gs =10v, v ds =240v, i d =1.2a v ds =0v, v gs =30v i dss zero gate voltage drain current v ds =300v, v gs =0v gate drain charge v ds =5v, i d =250 m a v ds =240v, t j =125c output capacitance dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =150v, i d =1.2a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge turn-on delaytime gate source charge drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c maximum body-diode pulsed current input capacitance t d(off) 29 ns t f 12 ns t rr 60 88 120 ns q rr 0.20 0.29 0.40 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time i f =1.2a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery charge i f =1.2a,di/dt=100a/ m s,v ds =100v a. the value of r q ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction tempera ture of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation pd is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. l=60mh, i as =2.1a, v dd =150v, r g =10 , starting t j =25 c. rev 0: mar 2011 www.aosmd.com page 2 of 6
AON7460 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 25 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6.0v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics -55 c v ds =40v 25 c 125 c 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =1.2a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0 2 4 6 8 10 0 5 10 15 20 25 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6.0v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics -55 c v ds =40v 25 c 125 c 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =1.2a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev 0: mar 2011 www.aosmd.com page 3 of 6
AON7460 typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =240v i d =1.2a 0 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c 100 m s 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0 3 6 9 12 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =240v i d =1.2a 0 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c 100 m s 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =3.7 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 0: mar 2011 www.aosmd.com page 4 of 6
AON7460 typical electrical and thermal characteristics 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note b) 0.0 1.0 2.0 3.0 4.0 5.0 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note b) 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note g) t j(max) =150 c t a =25 c 0 10 20 30 40 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note b) 0.0 1.0 2.0 3.0 4.0 5.0 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note b) 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) t j(max) =150 c t a =25 c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev 0: mar 2011 www.aosmd.com page 5 of 6
AON7460 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev 0: mar 2011 www.aosmd.com page 6 of 6
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